IPB067N08N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPB067N08N3 G
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 136 W 80 V Continuous Drain Current (ID):80 A 56 nC
| Parameter | Value |
|---|---|
| Gate Charge | 56 nC |
| Gate to Source Threshold Voltage | 2.8 V |
| Continuous Drain Current (ID) | 80 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 6.7 mΩ |
| Input capacitance | 3.84 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 136 W |
| Drain to Source Breakdown Voltage (Vds) | 80 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 22
Distributors
pcbx
pcbxUnit Price$2.38440
Ext.Price$2.38440
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.38440 | $2.38440 |
| 10 | $1.55854 | $15.58540 |
| 25 | $1.43636 | $35.90900 |
| 50 | $1.32376 | $66.18800 |
| 100 | $1.21999 | $121.99900 |
| 300 | $1.11874 | $335.62200 |
| 500 | $1.02591 | $512.95500 |
| 1000 | $0.86348 | $863.48000 |